Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670472 | Thin Solid Films | 2011 | 4 Pages |
Abstract
Spectroscopic ellipsometry (SE) measurements were carried out in order to characterize the optical properties of silicon nanoscale inclusions (Si-ni) contained in silicon-rich silicon nitride (SRSN) films. These films were deposited using the plasma enhanced chemical vapor deposition (PECVD) technique followed by rapid thermal annealing (RTA) during 1Â min. We focus our study on the influence of the deposition and annealing conditions - such as the ammonia to silane flow ratio R, the annealing atmosphere and temperature - on the optical responses of the SRSN layers and the behavior of the Si-ni dielectric functions. Our results suggest that the variation of R affects in a more significant way the structure and optical properties of the SRSN films than the change of the annealing gas or temperature.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A.-S. Keita, A. En Naciri, F. Delachat, M. Carrada, G. Ferblantier, A. Slaoui, M. Stchakovsky,