Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670639 | Thin Solid Films | 2005 | 5 Pages |
Abstract
Biaxially textured MgO thin films were grown by ion-beam-assisted deposition. The film growth parameters of film thickness, ion-to-atom arrival ratio (r-value), ion beam angle, and ion beam voltage were studied. Film characterization was performed by X-ray diffraction, pole figure analysis, and atomic force microscopy (AFM). Full-width half-maximum (FWHM) of MgO (220) Ï-scans and MgO (002) Ï-scans, respectively, were used to evaluate in-plane and out-of-plane film texture. MgO (220) Ï-scan FWHM of 3.2° and MgO (002) Ï-scan FWHM of 1.2° was achieved on amorphous Si3N4-coated Si substrates using a 1500-V ion source oriented at 45° to the substrate normal and an r-value of 0.90. Depositions on metallic substrates yielded MgO (220) Ï-scan FWHM values of 5.2° and MgO (002) Ï-scan FWHM of 2.5°. Root-mean-square surface roughness of these films as measured by AFM was â2.3 nm.
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Authors
T.P. Weber, B. Ma, U. Balachandran, M. McNallan,