Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670648 | Thin Solid Films | 2005 | 5 Pages |
Abstract
The ordered SiO2 in the buried oxide (BOX) layer of high-dose, low-dose, and internal-thermal-oxidation (ITOX) separation-by-implanted-oxygen (SIMOX) wafers was investigated by X-ray diffraction. From the results, it was found that the SiO2 molecules in the low-dose and ITOX SIMOX wafers are better ordered than those in the high-dose SIMOX wafer and that the ordered structure of the ITOX layer is different from that of the originally formed BOX layer, suggesting that the ITOX layer has a structure similar to that of the ordered SiO2 in the thermal oxide layer.
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Authors
T. Shimura, K. Fukuda, K. Yasutake, T. Hosoi, M. Umeno,