Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670649 | Thin Solid Films | 2005 | 7 Pages |
Abstract
A chemical kinetics model was proposed to describe the abrasive size effect on chemical mechanical polishing (CMP). The model is based on the consideration of a pad as a sort of catalyst and the re-adhering of abrasives due to the large size. Therefore, a general equation was deduced according the chemical kinetics methodology to give the meanings of the size effect. Finally, according a set of data related to the abrasive size effect on CMP, a possible form can be PR=αCCCTXACWAn/[β+γXACWAn] where α, β, γ and n are the parameters in a CMP system.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ping Hsun Chen, Bing Wei Huang, Han-C Shih,