Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670681 | Thin Solid Films | 2005 | 7 Pages |
Abstract
In this paper we present the results of XPS study of the surface chemistry of L-CVD SnO2 thin films onto Si(100) before and after subsequent additional oxidation. Moreover, the ageing effect was also studied in order to check the influence of ambient oxidation. As-deposited L-CVD SnO2 thin films exhibit evident nonstoichiometry with the relative concentration [O]/[Sn] equal to 1.29 ± 0.1. After in situ oxidation at high temperature (800 K) the relative concentration [O]/[Sn] increases to 1.95 ± 0.05 which corresponds to the almost stoichiometric SnO2. Almost the same relative concentration [O]/[Sn] of L-CVD SnO2 thin films has been obtained after long term exposure to air. The oxidation states of L-CVD SnO2 thin films in both cases were confirmed by the shape analysis of corresponding XPS O1s and Sn3d5/2 peaks using the decomposition procedure. For the as-deposited L-CVD SnO2 thin films a mixture of SnO and SnO2 was observed, while for the oxidized L-CVD SnO2 thin films the domination of SnO2 was determined.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Kwoka, L. Ottaviano, M. Passacantando, S. Santucci, G. Czempik, J. Szuber,