Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670715 | Thin Solid Films | 2005 | 4 Pages |
Abstract
Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 °C were cubic crystalline InN; and at 500 °C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 °C. The inclusion of metallic indium appeared on the InN film deposited at 500 °C.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hiroyuki Shinoda, Nobuki Mutsukura,