Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670729 | Thin Solid Films | 2005 | 4 Pages |
Abstract
Thin films of ultra-low-κ materials such as porous methyl silsesquioxane (MSQ) (κ=2.2) were implanted with argon 1Ã1016 cmâ2 dose at energies varying from 20 to 50 keV at room temperature. This work shows that the surface hardness of the porous films can be improved five times as compared to the as-deposited porous films by implanting Ar with 1Ã1016 cmâ2 doses at 20 keV, sacrificing only a slight increase (â¼9%) in dielectric constant (e.g., from 2.2 to 2.4). The hardness persists after 450 °C annealing. In this current work, an ion implantation strategy was pursued to create a SiO2-like surface on MSQ. The effects of implantation parameters on the barrier property and bulk stability of MSQ were then studied. The results reveal one possible route to attain the “zero barrier thickness” requirement for interconnects systems.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Zubin P. Patel, Alok Nandini U. Roy, H. Bakhru, T.-M. Lu,