Article ID Journal Published Year Pages File Type
10670729 Thin Solid Films 2005 4 Pages PDF
Abstract
Thin films of ultra-low-κ materials such as porous methyl silsesquioxane (MSQ) (κ=2.2) were implanted with argon 1×1016 cm−2 dose at energies varying from 20 to 50 keV at room temperature. This work shows that the surface hardness of the porous films can be improved five times as compared to the as-deposited porous films by implanting Ar with 1×1016 cm−2 doses at 20 keV, sacrificing only a slight increase (∼9%) in dielectric constant (e.g., from 2.2 to 2.4). The hardness persists after 450 °C annealing. In this current work, an ion implantation strategy was pursued to create a SiO2-like surface on MSQ. The effects of implantation parameters on the barrier property and bulk stability of MSQ were then studied. The results reveal one possible route to attain the “zero barrier thickness” requirement for interconnects systems.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Authors
, , , ,