Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10670774 | Thin Solid Films | 2005 | 5 Pages |
Abstract
Aluminum and copper interconnects are widely used for microelectronic applications. A problem can arise when interfacial oxides are present. Such oxides can significantly degrade device performance by increasing electrical resistance. This paper describes analyses of interfacial oxide layers found in Al/Ta and Ta/Cu metal stacks. The analyses were performed through transmission electron microscopy (TEM). The data indicated that the interfacial oxides resulted from spontaneous reductions; that is, Al spontaneously reduced Ta2O5 to form Al2O3, while Ta spontaneously reduced Cu oxide to form Ta2O5.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Wentao Qin, Alex A. Volinsky, Dennis Werho, N. David Theodore, Mike Kottke, Chandra Ramiah,