| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10670797 | Thin Solid Films | 2005 | 7 Pages |
Abstract
The crystallization route of thin SrBi2Ta2O9 (SBT) films deposited on Pt(100 nm)/Ti(10 nm)/SiO2/Si substrate is investigated at different annealing temperatures by atomic force microscopy (AFM) and X-ray diffractometry (XRD). To evaluate the SBT film properties for low voltage operation and for high storage density (>16 MBit), SBT is deposited at different film thicknesses. Furthermore, the performance of a Pt/SBT/Pt capacitor on a barrier-/contact-layer/polysilicon-plug architecture suitable for stacked capacitor memories is investigated by transmission electron microscopy (TEM)/energy dispersive X-ray analysis (EDX) and electrical measurements. It is shown that an oxidized and highly resistive contact layer can be recovered by electrical pulses. Finally, a process solution for a successful integration of 38 nm thin SBT films into this structure is provided.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Manfred Moert, Thomas Mikolajick, Guenther Schindler, Nicolas Nagel, Igor Kasko, Walter Hartner, Christine Dehm, Hermann Kohlstedt, Rainer Waser,