| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10671007 | Thin Solid Films | 2005 | 4 Pages |
Abstract
A p-n homojunction was obtained by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film. The deposition process of ZnO and Zn3P2 thin film was performed by pulsed laser deposition (PLD). A p-n junction was formed by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film and showed typical I-V characteristics of a diode. Laser annealing could be a useful technique for the fabrication of an ultraviolet light-emitting diode or an ultraviolet laser diode.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Sang Yeol Lee, Eun Sub Shim, Hong Seong Kang, Seong Sik Pang, Jeong Seok Kang,