Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10671008 | Thin Solid Films | 2005 | 6 Pages |
Abstract
Nanocrystalline gallium doped zinc oxide (ZnO:Ga) thin films were synthesized by plasma-enhanced chemical vapor deposition (PECVD). A statistical design of experiments (DOE) was employed to optimize electrical conductivity. A carrier concentration of 5.5Ã1020/cm3 and a mobility of 15 cm2/V s yielding a resistivity of 7.5Ã10â4 Ω cm resulted from the conditions of high pressure, rf power, and electrode gap. X-ray diffraction showed that gallium doping had a profound impact on film orientation. Atomic force microscopy (AFM) revealed that the films were nanostructured, with an average grain size of 80 nm and a surface roughness of â¼2 nm. This unique morphology benefited optical transmission, but limited electrical performance. Average transmission across the visible spectrum was â¼93% as scattering losses were minimized. Temperature dependent Hall and optical transmission measurements demonstrated that structural defects and ionized impurities were equal contributors to electron scattering.
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Physical Sciences and Engineering
Materials Science
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Authors
J.J. Robbins, J. Harvey, J. Leaf, C. Fry, C.A. Wolden,