| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10671028 | Thin Solid Films | 2005 | 6 Pages |
Abstract
Cobalt oxide films were grown by Pulsed Injection Metal Organic Chemical Vapour Deposition (PI-MOCVD) using Co(acac)3 (acac=acetylacetonate) precursor dissolved in toluene. The structure, morphology and growth rate of the layers deposited on silicon substrates were studied as a function of deposition temperature. Pure Co3O4 spinel structure was found for deposition temperatures ranging from 360 to 540 °C. The optimum experimental parameters to prepare dense layers with a high growth rate were determined and used to prepare corrosion protective coatings for Fe-22Cr metallic interconnects, to be used in Intermediate Temperature Solid Oxide Fuel Cells.
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Authors
M. Burriel, G. Garcia, J. Santiso, A.N. Hansson, S. Linderoth, A. Figueras,