| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10672527 | Ultramicroscopy | 2011 | 13 Pages |
Abstract
⺠In this article, an algorithm is proposed to simulate ion images. ⺠Focus is on: sputtering, secondary electron yield, noise ions and secondaries. ⺠The detection noise is not negligible in ion microscopy. ⺠The sputtering pattern must be taken into account when evaluating the resolution. ⺠The distinctive SE yield explains the high resolution of He-FIBs.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
V. Castaldo, C.W. Hagen, P. Kruit,