| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10672529 | Ultramicroscopy | 2011 | 15 Pages |
Abstract
⺠Both elastic and inelastic scattering in STEM are acceleration voltage dependent. ⺠HAADF, EELS and ABF imaging are assessed with a view to optimum imaging. ⺠Lower accelerating voltages improve STEM EELS contrast in very thin crystals. ⺠Higher accelerating voltages give better STEM EELS contrast in thicker crystals. ⺠At fixed resolution, higher accelerating voltage aids ABF imaging of light elements.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
N.R. Lugg, S.D. Findlay, N. Shibata, T. Mizoguchi, A.J. D'Alfonso, L.J. Allen, Y. Ikuhara,