| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10672555 | Ultramicroscopy | 2011 | 8 Pages |
Abstract
⺠Test sample was wedge indentation in single-crystal silicon. ⺠EBSD cross-correlation techniques used to measure surface orientation across indentation. ⺠Surface morphology/uplift was calculated from surface orientation profile. ⺠Characterized surface morphology with AFM; good agreement with EBSD obtained. ⺠Modeled uplift as dilatation below indentation gave good agreement with experiment.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M.D. Vaudin, G. Stan, Y.B. Gerbig, R.F. Cook,