| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10672568 | Ultramicroscopy | 2011 | 12 Pages |
Abstract
⺠Composition mapping in InGaN using quantitative STEM. ⺠No electron beam induced In clustering in InGaN observed for STEM. ⺠Small influence of lattice plane bending for STEM of InGaN/GaN. ⺠In composition fluctuations in InGaN detected.
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Authors
Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Parlapalli Venkata Satyam, Stephanie Bley, Christian Tessarek, Detlef Hommel, Katrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl,