Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10672610 | Ultramicroscopy | 2009 | 7 Pages |
Abstract
We have devised a technique for spectral imaging using accurate ab initio electron energy loss near edge structure (ELNES) data and function field visualization. The technique is initially applied to a planar defect model in Si with different ring structures and no broken bonds where experimental probes are severely limited. The same model with B doping is also considered. It is shown that specific deviations in different energy ranges of the ELNES spectra are correlated with different structural components of the models.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
P. Rulis, A.R. Lupini, S.J. Pennycook, W.Y. Ching,