Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10672611 | Ultramicroscopy | 2009 | 6 Pages |
Abstract
The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
K. Inoue, F. Yano, A. Nishida, H. Takamizawa, T. Tsunomura, Y. Nagai, M. Hasegawa,