Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10674691 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 4 Pages |
Abstract
Single, double and triple-layer test structures were measured by time of flight (TOF) Rutherford backscattering spectrometry (RBS) for checking the sensitivity and resolution. A single-layer nanostructure with Au stripes on a Si substrate was resolved by TOF-RBS measurement within a short time of 256Â s. The spatial resolution, measured by the edge of the Au stripes, was 42Â nm. Another single-layer nanostructure with Pt stripes fabricated by electron beam (EB) induced deposition on a Si substrate was resolved by TOF-RBS measurement even at a thickness of Pt stripes less than one mono-layer. Ga embedded layers implanted by a focused ion beam under the Pt stripes fabricated by EB induced deposition on a Si substrate could be detected for a double-layer nanostructure. Furthermore, a triple-layer nanostructure with two Pt stripe layers isolated by a SiO2 layer fabricated by EB induced deposition on a Si substrate could be resolved and cross-sections shown.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Satoshi Abo, Shunya Kumano, Takayuki Azuma, Ryota Sugimoto, Kohei Koresawa, Katsuhisa Murakami, Fujio Wakaya, Mikio Takai,