Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10674718 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 4 Pages |
Abstract
Soft errors induced by proton, helium and oxygen ion irradiations were measured as a function of distance between a body electrode under partial trench isolation and a metal pad connected to a tungsten via for the first metal layer of a silicon-on-insulator (SOI) static random access memory. Abnormal drain charges induced by ion irradiations with various distances in the SOI metal oxide semiconductor field effect transistor were simulated to be compared with the experimental results. The soft errors were found to depend on the distance between the body electrode and the metal pad in the case of the abnormal drain charge, which is induced by incident ions, lower than the critical charge of the SRAM cells. The soft errors did not depend on the distance for the abnormal drain charges higher than the critical charge.
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Authors
Satoshi Abo, Naoyuki Masuda, Fujio Wakaya, Shinobu Onoda, Takahiro Makino, Toshio Hirao, Takeshi Ohshima, Toshiaki Iwamatsu, Hidekazu Oda, Mikio Takai,