| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10674863 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 4 Pages |
Abstract
Spatial and temporal characteristics of energy deposition events and electron-hole distributions as a result of the passage of energetic ions in silicon are studied using Monte Carlo simulations, for incident ion energies in the range of 0.5-100Â MeV/amu. Ion track radii as function of the incident ion energy are presented. The range of ion energies and masses for possible melting in the track region is calculated. It is also found that it is not possible to separate between the temporal and spatial characteristics.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A. Akkerman, M. Murat, J. Barak,