Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10674885 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 4 Pages |
Abstract
We perform first-principles calculations to investigate the stress effects on stability and diffusion of H in W. Both the solution energy and the diffusion barrier of H decrease with increasing tensile stress. We show that the stress will not alter the site preference and the relative stability, with â¼0.4Â eV stress-independent energy difference between the TIS and the OIS. We demonstrate the solution and the diffusion of H in W becomes more difficult under the applied compressive stress, which theoretically provides a possible way to suppress the H retention in W.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Wen-Ying Li, Ying Zhang, Hong-Bo Zhou, Shuo Jin, Guang-Hong Lu,