Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10674949 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 6 Pages |
Abstract
SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Xinli Cheng, Zhijun Chen, Yongjin Wang, Bo Jin, Feng Zhang, Shichang Zou,