Article ID Journal Published Year Pages File Type
10674949 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2005 6 Pages PDF
Abstract
SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI.
Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
Authors
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