Strain and defect structure of iron implanted In0.53Ga0.47As using high-resolution X-ray diffraction

The concentration of defects in 1 MeV Fe+ implanted In0.53Ga0.47As depends very strongly on implantation temperature. For implantation at 77 K, the whole InGaAs layer was amorphous after a dose of 5 × 1014 cm−2. Defects formed during 77 K, room temperature (RT) and 100 °C implants result in an expansion of the lattice parameter of the layer and a change of the strain from tensile for as-grown material to compressive for as-implanted samples. Annealing of the 77 K implanted samples causes re-growth of the amorphous layer and its thickness depends on the annealing temperature.