Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10675435 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 14 Pages |
Abstract
A mathematical model to describe processes occurring during the irradiation of semiconductor materials with high power pulsed ion beams is proposed. The model takes account of recombination between vacancies and interstitial atoms and the formation of defect complexes and these processes are analysed and discussed. The effect of an inhomogeneous non-stationary temperature field and mechanical quasi-static and dynamic stress fields on radiation defect profiles is also examined. Spatial profiles of the charge carrier concentration and the implanted ion distribution are calculated and a comparison made with experimental profiles obtained for the semiconductor compound Hg1âxCdxTe. The results show that the defect concentration profiles near the surface are reduced with a large rate of recombination between vacancy and interstitial atoms.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A.V. Voitsekhovskii, A.P. Kokhanenko, S.A. Shulga, Roger Smith,