| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10676128 | Vacuum | 2012 | 4 Pages |
Abstract
⺠The band alignment of Ce-silicate with respect to Si is determined by X-ray photoelectron spectroscopy. ⺠The photoelectron spectra of Ce3+, Ce4+ and Ce-silicates are extracted from Ce-oxide thin film on a Si wafer. ⺠The valence number change of Ce atoms after annealing was model base on reaction of Ce and Si substrate.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
M. Mamatrishat, M. Kouda, K. Kakushima, H. Nohira, P. Ahmet, Y. Kataoka, A. Nishiyama, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai,