| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10676141 | Vacuum | 2012 | 5 Pages |
Abstract
⺠Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions. ⺠Continuous 3C-SiC domains for the layer grown at Si-rich conditions. ⺠Hill and pit nature of 6H-SiC inclusions investigated by AFM. ⺠Higher intensity of the 3C-SiC 111 peak for 3C-SiC grown at Si-rich conditions.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
M. Beshkova, J. Birch, M. Syväjärvi, R. Yakimova,