Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10676259 | Vacuum | 2005 | 5 Pages |
Abstract
X-ray diffraction, atomic force microscopy and electrical studies were performed on 2-3 μm thick diamond films on silicon substrates. The films were produced by the microwave plasma chemical vapour deposition method. The films were polycrystalline having a grain size of 32.1 nm. From room temperature current-voltage measurements, it was found that the charge transport mechanism was due to the thermionic emission over the potential barrier of 1.3 eV.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
S. Chaure, N.B. Chaure, A.K. Hassan, A.K. Ray, H.S. Reehal, A. Ghermazion, R. Capan,