| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10676499 | Vacuum | 2005 | 5 Pages |
Abstract
The effect of annealing at 300-500 °C under enhanced hydrostatic pressure (up to 1.2 GPa) in argon ambient on the interstitial oxygen aggregation (thermal donors) in Czochralski-grown silicon subjected to electron and neutron irradiation was investigated by infrared absorption and electrical techniques. Strong pressure- and irradiation-enhanced changes in oxygen concentration, formation of intrinsic p-n-junctions, conversion of conductivity type due to formation of the thermal donors and thermal acceptors were found. A comparison with neutron-irradiated samples is made.
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Materials Science
Surfaces, Coatings and Films
Authors
I.V. Antonova, A. Misiuk, C. Londos, B. Surma, S.A. Smagulova, A. Bukowski, W. Jung, A. Barcz,