Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10706023 | Infrared Physics & Technology | 2005 | 6 Pages |
Abstract
The nonuniform temperature distribution in the surface of Hg1âxCdxTe semiconductor crystals during ultrasonic excitation was detected. This phenomenon was associated with a sonic-stimulated temperature rise around dislocations and a macroscopic heating of nonperfect regions. The dislocation moving in an ultrasonic field was considered as a linear thermal source and the temperature distribution around the dislocation was calculated. The discrete distribution of thermal sources is realised for Hg1âxCdxTe solid solutions at the average dislocation density â¼1010Â mâ2. The model of the sonic-stimulated activation of internal sources of the infrared radiation was proposed.
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Authors
R.K. Savkina, A.B. Smirnov,