Temperature rise in crystals subjected to ultrasonic influence

The nonuniform temperature distribution in the surface of Hg1−xCdxTe semiconductor crystals during ultrasonic excitation was detected. This phenomenon was associated with a sonic-stimulated temperature rise around dislocations and a macroscopic heating of nonperfect regions. The dislocation moving in an ultrasonic field was considered as a linear thermal source and the temperature distribution around the dislocation was calculated. The discrete distribution of thermal sources is realised for Hg1−xCdxTe solid solutions at the average dislocation density ∼1010 m−2. The model of the sonic-stimulated activation of internal sources of the infrared radiation was proposed.