Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10706034 | Infrared Physics & Technology | 2005 | 10 Pages |
Abstract
This paper describes novel semiconductor quantum wire infrared photodetectors in the long- and very long-wavelength regions. The infrared photodetectors are based on intersubband transitions in semiconductor quantum wires and have the potential for higher operational temperature, increased signal-to-noise ratio, reduced dark current, wider spectral range and sensitivity to normal incident radiation. The quantum wire IR detectors are implemented using a nonlithographic nanostructure fabrication technique that is capable of producing large arrays of semiconductor quantum wires of a variety of materials and on different substrates. This paper describes the operational principles, the design procedure as well as the implementation of the quantum wire photodetectors.
Related Topics
Physical Sciences and Engineering
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Authors
Biswajit Das, Pavan Singaraju,