Noise behavior of amorphous GexSi1−xOy for microbolometer applications

High resistivity sputtered a-GexSi1−xOy compound was investigated for application to microbolometer fabrication for thermal imaging. Noise behavior of the fabricated bolometers was measured, showing no evidence of random telegraph switching (RTS) noise. 1/f noise was measured at several measuring currents, resulting in a 1/f noise factor of 2.9 × 10−11 that can be used for further design and modeling.