Article ID Journal Published Year Pages File Type
10707087 Journal of Crystal Growth 2012 5 Pages PDF
Abstract
► Ga2O3 films have been prepared on MgO (110) substrates by MOCVD. ► The epitaxial relationship is β-Ga2O3(2¯04) ‖MgO (110) with Ga2O3 [010]‖ MgO [001]. ► Twofold domain structure exists inside the film. ► The average transmittance of the films in the visible wavelength range exceeded 90%.
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Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal-organic chemical vapor deposition
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