| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707088 | Journal of Crystal Growth | 2012 | 8 Pages |
Abstract
⺠Global simulations are conducted for a 300 mm MCZ-Si crystal growth. ⺠Additional MHD terms are introduced to the turbulence model. ⺠CMF configurations affect the melt convection and oxygen transport. ⺠Adjusting the symmetry plane of CMF to get more favorable growth interface.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Xin Liu, Lijun Liu, Zaoyang Li, Yuan Wang,