| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707089 | Journal of Crystal Growth | 2012 | 10 Pages |
Abstract
⺠The growth of 3C-SiC layers onto silicon substrate by VLS transport was investigated. ⺠A SiGe alloy was used as the liquid phase. ⺠Different ways of liquid localization were tested. ⺠Nucleation of SiC from the liquid phase requires using a 3C-SiC seeding layer. ⺠For the best conditions, epitaxial 3C-SiC trapezoidal islands were formed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Stéphane Berckmans, Laurent Auvray, Gabriel Ferro, François Cauwet, Véronique Soulière, Emmanuel Collard, Christian Brylinski,