| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707093 | Journal of Crystal Growth | 2012 | 6 Pages |
Abstract
⺠In silicon carbide, birefringence patterns associated to small dislocations allow to recover the Burgers vector component in the basal plane. ⺠The influence of residual stress on the birefringence pattern is analyzed and its modeling is experimentally validated. ⺠KOH etching and birefringence imaging give complementary information. ⺠Critical assessment of birefringence imaging is given.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Le Thi Mai Hoa, T. Ouisse, D. Chaussende,