| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707095 | Journal of Crystal Growth | 2012 | 4 Pages |
Abstract
⺠InN thin films were grown on c-Al2O3 substrates and on GaN films by PAMBE. ⺠InN films were characterized by HRXRD, Hall measurements, absorption and Raman spectroscopy. ⺠The optical band gap of InN films was found to be carrier concentrations dependent. ⺠The dependence of optical band gap on carrier concentration was described using k.p model.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Basanta Roul, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Mahesh Kumar, A.T. Kalghatgi, S.B. Krupanidhi,