| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707096 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
⺠We have studied a novel approach for the growth of GaN layers ⺠We have studied Plasma-assisted electroepitaxy (PAEE) ⺠We have used the plasma process for producing high concentrations of N in the Ga ⺠We have used the electroepitaxy to transfer the N species to the growth interface ⺠We have demonstrated continuous GaN layers by PAEE from liquid Ga melt
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S.V. Novikov, C.T. Foxon,