Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

Article ID	Journal	Published Year	Pages	File Type
10707104	Journal of Crystal Growth	2012	5 Pages	PDF

Abstract

âº Plasma-assisted molecular beam epitaxy of AlN epilayers at temperatures below 800Â Â°C. âº Droplet-free and atomically smooth surface of III-nitrides thin films. âº Segregation effects in superlattices AlGaN/AlN. âº Laser reflectometry and RHEED monitoring.

Keywords

A1. Desorption A3. Molecular Beam Epitaxy A3. Migration enhanced epitaxy B1. Nitrides B2. Semiconducting aluminum compounds

Related Topics

Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics

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Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

Authors

V.N. Jmerik, A.M. Mizerov, D.V. Nechaev, P.A. Aseev, A.A. Sitnikova, S.I. Troshkov, P.S. Kop'ev, S.V. Ivanov,