| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707119 | Journal of Crystal Growth | 2012 | 7 Pages |
Abstract
⺠Thermal properties result in a lower temperature in the Si charge during melting. ⺠The dissolved oxygen concentration along ingot height decreases faster. ⺠Boron contamination is eliminated through an alert choice of crucible raw material. ⺠Phosphorus contamination is eliminated within a few re-runs of the crucible.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C. Modanese, M. Di Sabatino, M. Syvertsen, L. Arnberg,