| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707122 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
⺠CdTe layers deposited with an inline AP-MOCVD process as an alternative path to high throughput process. ⺠Over 40% material utilisation can be achieved depending on deposition parameters. ⺠Substrate temperature and total flow were critical parameters. ⺠The activation energy was found to be 49 kJ molâ1 and in agreement with literature.
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Authors
V. Barrioz, G. Kartopu, S.J.C. Irvine, S. Monir, X. Yang,