Article ID Journal Published Year Pages File Type
10707128 Journal of Crystal Growth 2012 7 Pages PDF
Abstract
► Growth of GaN by Selective Area Growth (SAG-) Hydride Vapor Phase Epitaxy (HVPE). ► High concentration of hydrogen in the carrier gas revealed domains of nil growth rates. ► Thermodynamic and kinetic analyses of the grown (0001) GaN layers led to analysing the reasons leading to a blocking of the GaN structures. ► Growth was performed on both unmasked (0001) GaN and patterned GaN/c-plane sapphire substrates. ► Long-time HVPE runs were performed to identify the prevailing growth mechanism.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Authors
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