Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707128 | Journal of Crystal Growth | 2012 | 7 Pages |
Abstract
⺠Growth of GaN by Selective Area Growth (SAG-) Hydride Vapor Phase Epitaxy (HVPE). ⺠High concentration of hydrogen in the carrier gas revealed domains of nil growth rates. ⺠Thermodynamic and kinetic analyses of the grown (0001) GaN layers led to analysing the reasons leading to a blocking of the GaN structures. ⺠Growth was performed on both unmasked (0001) GaN and patterned GaN/c-plane sapphire substrates. ⺠Long-time HVPE runs were performed to identify the prevailing growth mechanism.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y. André, A. Trassoudaine, E. Gil, K. Lekhal, O. Chelda-Gourmala, D. Castelluci, R. Cadoret,