Generation and annihilation of point defects by doping impurities during FZ silicon crystal growth

► Impurity doping during FZ silicon crystal growth on birth and death of intrinsic point defects. ► Molecular nitrogen shown by IR removes both secondary defects of self-interstitial and vacancy. ► Seven kinds of impurities having covalent bonding radii that are smaller or larger than that of silicon. ► Such impurity doping demonstrates birth and death of point defects according to Vegard's law.