Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10707140 | Journal of Crystal Growth | 2011 | 21 Pages |
Abstract
⺠We argue Voronkov's model by the ratio of growth rate to thermal gradient on point defects created in Si. ⺠Thermal gradient lowers with raising growth rate and this is essential to our model. ⺠Only vacancy exists on growth interface and self-interstitial is created over a thermal stress. ⺠Perfect Si is obtained by equally combining with self-interstitial and vacancy from growth interface.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Takao Abe, Toru Takahashi,