| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707142 | Journal of Crystal Growth | 2011 | 6 Pages |
Abstract
⺠InGaN quantum dots were grown on GaN by metalorganic vapor phase epitaxy. ⺠Quantum dots density, average height and diameter were â¼1010 cmâ2, 4 and 40 nm. ⺠Quantum dots are formed according to the Stranski-Krastanov growth mode. ⺠Critical layer thickness for this transition at 675 °C with 22% In was â¼4 nm. ⺠Strong green emission at around 530 nm was realised from the InGaN/GaN stacks.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Abdul Kadir, Christian Meissner, Tilman Schwaner, Markus Pristovsek, Michael Kneissl,