| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707146 | Journal of Crystal Growth | 2011 | 6 Pages |
Abstract
⺠Position controlled self-seeded InAs nanowire growth on Si is studied. ⺠The influence of a SiO2 mask gives information on the growth mechanism. ⺠An optimum indium particle size range for nanowire nucleation exists. ⺠The In particle size depends on SiO2 layer opening size and process conditions.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Bernhard Mandl, Anil W. Dey, Julian Stangl, Mirco Cantoro, Lars-Erik Wernersson, Günther Bauer, Lars Samuelson, Knut Deppert, Claes Thelander,