| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707147 | Journal of Crystal Growth | 2011 | 5 Pages |
Abstract
⺠We fabricated AlN nanowires with uniform diameter via VLS growth mechanism. ⺠We affirmed VLS growth mechanism by the convictive characterizations. ⺠VLS-generated condition for the growth of AlN nanowires was explored. ⺠A thin Au film on Si substrates and low growth temperature are required. ⺠VS growth mechanism is non-selective for preparing AlN nanomaterials.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Leshu Yu, Yingying Lv, Xiaolan Zhang, Yiyue Zhang, Ruyi Zou, Fan Zhang,