| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707151 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
⺠Nonpolar a-plane GZO thin films are grown epitaxially on LAO (1 0 0) substrates. ⺠The polar c-plane or the coexistence of c- and a-plane is observed in the GZO thin films on STO (1 0 0). ⺠Electrical properties of the GZO thin films are deeply affected by the growth orientation. ⺠GZO films with a-axis oriented phase show higher resistivity than with c-oriented phase. ⺠The lower mobility of the a-axis oriented GZO films can be ascribed to grain boundary scattering.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Ji-Hong Kim, Ji-Hyung Roh, Kyung-Ju Lee, Sung-Joon Moon, Jae-Won Kim, Kang-Min Do, Byung-Moo Moon, Sang-Mo Koo,