| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707154 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
⺠GaN layers grown on r-plane sapphire were investigated using transmission electron microscopy. ⺠The predominant structure was a-plane oriented single-crystal. Misoriented grains with a preferential orientation were included. ⺠Orientation relationship between the a-plane layers and the misoriented grains revealed. ⺠Orientation relationship analyzed using atomic structure models.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yuki Tokumoto, Hyun-Jae Lee, Yutaka Ohno, Takafumi Yao, Ichiro Yonenaga,