| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10707159 | Journal of Crystal Growth | 2011 | 7 Pages |
Abstract
⺠Compared growth characteristics of Bi2Se3 films on different substrate/buffers. ⺠Suggested criteria of a suitable substrate for Bi2Se3 epitaxial growth. ⺠Identified a good substrate, i.e., In2Se3, for high quality epitaxial Bi2Se3 film.
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Authors
Z.Y. Wang, H.D. Li, X. Guo, W.K. Ho, M.H. Xie,